features marking: 1 h igh diode semiconductor sot- 23 electrical characteristics (ta =25 unless otherwise specified sot-23 plastic-encap sulate diodes 1 2 3 ?? marking:a1 marking a4 marking:a7 baw56/ba v70/bav99 ba w56 bav70 bav99 reve rs e voltage v r 70 v forward current i f 200 ma i fsm 2.0 a powe r dissipation p d 225 mw the rmal resistance junction to ambient r ja 556 /w junction te mperature t j 150 sto rag e temperature range t stg -55 ~+ 1 50 f orw ard s urge c urrent @ t =8.3 ms non-repetitive peak parameter symbol limit unit parameter sy mbol min typ max unit conditions reve rs e breakdown voltage v r 70 v i r =100 a v f1 0.715 v i f =1ma v f2 0.855 v i f =10ma v f3 1 v i f =50ma forwa rd voltage v f4 1.25 v i f =150ma reve rs e current i r 2.5 a v r =70v capacita n ce between terminals c t 1.5 pf v r =0,f=1mhz reve rs e recovery time t r r 6 ns i f = i r = 10ma, irr= 0.1 x i r , r l = 100 ? fast switching speed for general purpose switching applications high co nductance swi tching diodes
h l j k ' l r g h 6 h p l f r q g x f w r u 7 \ s l f d o & k d u d f w h u l v w l f v 0 25 50 75 100 125 150 0 50 100 150 200 250 300 0.0 0 .4 0.8 1.2 1.6 0.1 1 10 100 0 2 04 06 08 0 1 10 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 p o wer derating curve po wer dissipat ion p d (mw) am bient temperature ta ( ) 300 30 3 0.3 t a = 1 0 0 t a = 2 5 forward current i f (ma) f o rward voltage v f (v) 300 30 3 ta=100 ta=25 reverse current i r (na) reverse vo lt age v r (v) f o rward characteristics reverse characteristics ta=25 f=1m hz ca pacitance characteristics reverse vo lt age v r (v) capacitance bet ween terminals c t (pf)
jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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